MJD31C_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
MJD31C
3A , 100V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Designed for general
Excellent DC Current Gain Characteristics
D-Pack (TO-252)
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
B
C
D
GE
Collector
2
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction and Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
TJ ,TSTG
100
100
5
3
1.25
150 , -55~150
K
HF
N
O
P
M
J
Millimeter
REF. _{Min. Max.}
A 6.35 6.8
B 5.20 5.50
C 2.15 2.40
D 0.45 0.58
E 6.8
7.5
F 2.40 3.0
G 5.40 6.25
H 0.64 1.20
Millimeter
REF. _{Min. Max.}
J
2.30 REF.
K 0.64 0.90
M 0.50 1.1
N 0.9 1.65
O0
0.15
P 0.43 0.58
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max.
Collector-base breakdown voltage
V(BR)CBO
100
-
-
Collector-emitter breakdown voltage
VCEO(SUS)
100
-
-
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
Collector cut-off current
ICES
-
-
20
Collector cut-off current
ICEO
-
-
50
Emitter cut-off current
IEBO
-
-
1
DC current gain
25
-
-
hFE
10
-
50
Collector-emitter saturation voltage
VCE(sat)
-
-
1.2
Base-emitter voltage
VBE(ON)
-
-
1.8
Transition frequency
fT
Note:
1.Pulse Test: PW ≦300µS, Duty Cycle≦2%.
3
-
-
http://www.SeCoSGmbH.com/
21-Sep-2012 Rev. A
Unit
V
V
V
µA
µA
mA
V
V
MHz
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
IE=1mA, IC=0
VCE=100V, VEB=0
VCE=60V, IB=0
VEB=5V, IC=0
VCE=4V, IC=1A
VCE=4V, IC=3A
IC=3A, IB=375mA
VCE=4V, IC=3A
VCE=10V, IC=500mA, fT=1KHz
Any changes of specification will not be informed individually.
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