M8550T_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
M8550T
-0.8A , -40V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Power Dissipation
TO-92
A
D
B
E
CF
G
H
1Emitter
2Base
3Collector
J
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-40
-25
-6
-800
625
125, -55~125
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-40
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-25
-
-
V IC=0.1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-6
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA VCB=-35V, IE=0
Collector Cut-Off Current
ICEO
-
-
-0.1
µA VCE=-20V, IB=0
hFE(1)
45
-
-
VCE=-1V, IC=-5mA
DC Current Gain
hFE(2)
80
-
400
VCE=-1V, IC=-100mA
hFE(3)
40
-
-
VCE=-1V, IC=-800mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
-0.5
V IC=-800mA, IB=-80mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-1.2
V IC=-800mA, IB=-80mA
Transition Frequency
fT
80
-
-
MHz VCE=-6V, IC=-20mA, f=30MHz
*Pulse Test：pulse width ≦ 300 µs, duty cycle ≦ 2%.
http://www.SeCoSGmbH.com/
29-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
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