M8550 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR （ PNP ）

Elektronische Bauelemente
M8550
-40V, -0.8A, 200mW
PNP Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power dissipation
MARKING
Product
M8550
Marking Code
Y21
CLASSIFICATION OF h_FE(2)
Product-Rank
M8550-L
Range
85-200
M8550-H
200-300
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7’ inch
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
Collector
3
1
Base
2
Emitter
Ratings
-40
-25
-6
-0.8
0.2
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Collector-Base Breakdown Voltage
V(BR)CBO
Collector-Emitter Breakdown Voltage V(BR)CEO*
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
ICEO
hFE (1)
DC Current Gain
hFE (2)
hFE (3)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Transition frequency
fT
*Pulse test：pulse width ≦ 300µS, duty cycle ≦ 2%.
Min.
-40
-25
-6
-
-
45
80
40
-
-
150
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-
300
-
-0.5
-1.2
-
Unit
V
V
V
µA
µA
V
V
MHz
Test conditions
IC= -100µA, IE=0
IC= -1mA, IB=0
IE= -100µA, IC=0
VCB= -35V, IE=0
VCE= -20V, IC=0
VCE= -1V, IC= -5mA
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC= -800mA, IB= -80mA
IC= -800mA, IB= -80mA
VCE= -6V, IC= -20mA, f=30MHz
http://www.SeCoSGmbH.com/
29-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
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