M8050_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulate Transistor

Elektronische Bauelemente
M8050
40V, 0.8A, 200mW
NPN Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Power dissipation
MARKING
Product
M8050
Marking Code
Y11
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
CLASSIFICATION OF h_FE(2)
Product-Rank
M8050-L
Range
80-300
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
Collector


Base
MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Collector - Base Voltage
V_CBO
Collector - Emitter Voltage
V_CEO
Emitter - Base Voltage
V_EBO
Collector Current - Continuous
I_C
Collector Power Dissipation
P_C
Junction, Storage Temperature
T_J, T_STG
Rating
40
25
6
0.8
0.2
150, -55~150

Emitter
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage
I_C =100µA, I_E =0
Collector-Emitter Breakdown Voltage¹ I_C =1mA, I_B =0
Emitter-Base Breakdown Voltage
I_E =100µA, I_C =0
Collector Cut-Off Current
V_CB=35V, I_E=0
Emitter Cut-Off Current
V_CE=20V, I_B=0
V_CE=1V, I_C=5mA
DC Current Gain
V_CE=1V, I_C=100mA
V_CE=1V, I_C=800mA
Collector-Emitter Saturation Voltage I_C=800mA, I_B=80mA
Base-Emitter Saturation Voltage
I_C=800mA, I_B=80mA
Transition frequency
V_CE=6V, I_C=20mA, f=30MHz
Note:
1. Pulse test：pulse width ≦ 300　S, duty cycle ≦ 2%.
http://www.SeCoSGmbH.com/
V_(BR)CBO
40
-
-
V
V_(BR)CEO
25
-
-
V
V_(BR)EBO
6
-
-
V
I_CBO
-
-
0.1
µA
I_CEO
-
-
0.1
µA
h_FE1
45
-
-
h_FE2
80
-
300
h_FE3
40
-
-
V_CE(sat)
-
-
0.5
V
V_BE(sat)
-
-
1.2
V
f_T
150
-
-
MHz
Any changes of specification will not be informed individually.
27-Jun-2012 Rev. B
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