M8050T Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – 40V, 0.8A NPN Plastic Encapsulate Transistor

Elektronische Bauelemente
M8050T
40V, 0.8A
NPN Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power dissipation
TO-92
Collector
3
2
Base
1
Emitter
MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Collector - Base Voltage
VCBO
Collector - Emitter Voltage
VCEO
Emitter - Base Voltage
VEBO
Collector Current - Continuous
IC
Collector Power Dissipation
PC
Junction, Storage Temperature
TJ, TSTG
1 Emitter
2 Base
3 Collector
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
Rating
40
25
6
0.8
625
125, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Collector-Base Breakdown Voltage
IC =100µA, IE =0
Collector-Emitter Breakdown Voltage¹ IC =1mA, IB =0
V(BR)CBO
V(BR)CEO
Emitter-Base Breakdown Voltage
IE =100µA, IC =0
V(BR)EBO
Collector Cut-Off Current
VCB=35V, IE=0
ICBO
Emitter Cut-Off Current
VCE=20V, IB=0
ICEO
VCE=1V, IC=5mA
hFE1
DC Current Gain
VCE=1V, IC=100mA
hFE2
VCE=1V, IC=800mA
hFE3
Collector-Emitter Saturation Voltage IC=800mA, IB=80mA
VCE(sat)
Base-Emitter Saturation Voltage
IC=800mA, IB=80mA
VBE(sat)
Transition frequency
VCE=6V, IC=20mA, f=30MHz
fT
Note:
1. Pulse test：pulse width ≦ 300≦S, duty cycle ≦ 2%.
Min.
40
25
6
-
-
45
80
40
-
-
150
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
-
400
-
0.5
1.2
-
Unit
V
V
V
µA
µA
V
V
MHz
http://www.SeCoSGmbH.com/
29-Jan-2013 Rev. A
Any changes of specification will not be informed individually.
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