M8050 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR （ NPN ）

Elektronische Bauelemente
M8050
40V, 0.8A, 200mW
NPN Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Power dissipation
MARKING
Product
M8050
Marking Code
Y11
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
CLASSIFICATION OF h_FE(2)
Product-Rank
M8050-L
Range
80-200
M8050-H
200-300
Collector


Base
MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
RATINGS
40
25
6
0.8
0.2
150, -55~150

Emitter
UNIT
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS
Collector-Base Breakdown Voltage
I_C =100µA, I_E =0
Collector-Emitter Breakdown Voltage
I_C = -1mA, I_B =0
Emitter-Base Breakdown Voltage
I_E = -100µA, I_C =0
Collector Cut-Off Current
V_CB = 35V, I_E =0
Emitter Cut-Off Current
V_CE = 20V, I_C =0
V_CE = 1V, I_C = 5mA
DC Current Gain
V_CE = 1V, I_C = 100mA
V_CE = 1V, I_C = 800mA
Collector-Emitter Saturation Voltage
I_C = 800mA, I_B = 80mA
Base-Emitter Saturation Voltage
I_C = 800mA, I_B = 80mA
Transition frequency
V_CE = 6V, I_C = 20mA, f=30MHz
*Pulse test：pulse width ≦ 300S, duty cycle ≦ 2%.
SYMBOL
V_(BR)CBO
V_(BR)CEO*
V_(BR)EBO
I_CBO
I_CEO
h_FE1
h_FE2
h_FE3
V_CE(sat)
V_BE(sat)
f_T
MIN.
40
25
6
-
-
45
80
40
-
-
150
TYP.
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.1
0.1
-
300
-
0.5
1.2
-
UNIT
V
V
V
µA
µA
V
V
MHz
http://www.SeCoSGmbH.com/
25-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
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