M28S_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
M28S
1A , 40V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Excellent h_FE Linearity
High DC Current Gain
CLASSIFICATION OF h_FE
Product-Rank M28S-B
Range
300~550
Marking
M28S-C
500~700
28S
M28S-D
650~1000
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
1
Base
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
Collector
3
2
Emitter
F
REF.
A
B
C
D
E
F
D
G
H
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
J
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
40
20
6
1
200
625
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
40
Collector to Emitter Breakdown Voltage V(BR)CEO
20
Emitter to Base Breakdown Voltage
V(BR)EBO
6
Collector Cut-Off Current
ICBO
-
Collector Cut-Off Current
ICEO
-
Emitter Cut-Off Current
IEBO
-
hFE(1)
290
DC Current Gain
hFE(2)
hFE(3)
300
300
hFE(4)
300
Collector to Emitter Saturation Voltage VCE(sat)
-
Transition Frequency
fT
100
Collector output capacitance
Cob
-
-
-
V IC=0.1mA, IE=0
-
-
V IC=1mA, IB=0
-
-
V IE=0.1mA, IC=0
-
0.1
µA VCB=35V, IE=0
-
5
µA VCE=20V, IB=0
-
0.1
µA VEB=5V, IC=0
-
-
VCE=1V, IC=1mA
-
1000
VCE=1V, IC=100mA
-
-
VCE=1V, IC=300mA
-
-
VCE=1V, IC=500mA
-
0.55
V IC=600mA, IB=20mA
-
-
MHz VCE=10V, IE=50mA, f=1MHz
9
-
pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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