M28ST Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – 1A , 40V NPN Plastic Encapsulated Elektronische Bauelemente Transistor

Elektronische Bauelemente
M28ST
1A , 40V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC Current Gain and Large Current Capability
TO-92
CLASSIFICATION OF h_{FE (1)}
Product-Rank M28ST-B
M28ST-C
Range
300~550
500~700
M28ST-D
650~1000
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Thermal Resistance From Junction
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, TSTG
Ratings
40
20
6
1
0.625
200
150, -55~150
1Emitter
2Collector
3Base
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-base Breakdown Voltage
V(BR)CBO
40
-
-
V IC =100µA, IE =0
Collector-emitter Breakdown Voltage V(BR)CEO
20
-
-
V IC =1mA, IB =0
Emitter-base Breakdown Voltage
V(BR)EBO
60
-
-
V IE =100µA, IC =0
Collector Cut-off Current
ICBO
-
-
1
µA VCB =40V, IE=0
Collector Cut-off Current
ICEO
-
-
5
µA VCE =20V, IB = 0
Emitter Cut-off Current
IEBO
-
-
0.1
µA VEB =5V, IC = 0
290
-
-
VCE =1V, IC =1mA
DC Current Gain
hFE
300
-
1000
VCE =1V, IC =100mA
300
-
-
VCE =10V, IC =300mA
Collector-emitter Saturation Voltage VCE(sat)
-
-
0.55
V IC =600mA, IB =20mA
Transition Frequency
fT
100
-
-
MHz VCE =10V, IE=50mA, f=30MHz
http://www.SeCoSGmbH.com/
29-May-2012 Rev.A
Any changes of specification will not be informed individually.
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