KTD2058 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

Elektronische Bauelemente
KTD2058
3A, 60V
P Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low collector saturation voltage: V_CE(sat)=1V (Max.)
TO-220J
CLASSIFICATION OF h_FE
Product-Rank
Y
Range
100-200
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
9.57 10.57
3.54 4.14
2.54 2.94
11.86 13.26
0.97 1.57
0.51 1.11
12.7 13.8
2.540 TYP.
REF.
I
J
K
L
M
N
Q
Millimeter
Min. Max.
4.68 5.48
2.95 3.96
4.27 4.87
1.07 1.47
8.0
10.0
2.03 2.92
0.30 0.65
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCEO
VEBO
IC
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature
PC
RθJA
TJ, TSTG
Rating
60
60
7
3
2
150
150, -55~150
Unit
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Storage Time
Fall Time
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Cob
ton
tstg
tf
60
60
7
-
-
100
-
-
-
-
0.65
-
-
-
-
-
-
-
-
3
35
0.65
1.3
Max.
-
-
-
100
100
200
1
1
-
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Condition
IC=0.1mA, IE=0
IC=50mA, IB=0
IE=0.1mA, IC=0
VCB=60V, IE=0
VEB=7V, IC=0
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f =1MHz
µS
http://www.SeCoSGmbH.com/
01-Sep-2016 Rev. A
Any changes of specification will not be informed individually.
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