KTD1304 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING)

Elektronische Bauelemente
KTD1304
0.3 A, 25 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z High emitter-base voltage: V_EBO=12V(Min)
z low on resistance: Ron=0.6Ω(max)(I_B=1mA)
PACKAGE DIMENSIONS
1
Base
3 ^Collector
2
Emitter
A
L
K
3
Top View
BS
1
2
V
G
D
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
T_J, T_STG
Ratings
25
20
12
300
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
I_CBO
I_EBO
h_{FE1 (FORWARD)}
h_{FE1 (REVERSE)}
V_CE(sat)
V_BE(sat)
fT
C_OB
R_(ON)
Min.
25
20
12
-
-
200
20
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
60
10
0.6
Max.
-
-
-
0.1
0.1
1000
-
0.25
1
-
-
-
Unit
V
V
V
uA
uA
V
V
MHz
pF
Ω
Test Conditions
I_C = 100 uA
I_C = 1 mA
I_E = 100 uA
V_CB = 25 V
V_EB = 12 V
V_CE = 2 V, I_C=4 mA
V_CE = 2 V, I_C=4 mA
I_C =100 mA, I_B=10 mA
I_C =100 mA, I_B=10 mA
V_CE = 10 V, I_C = 1 mA, f = 100 MHz
V_CB = 10 V, I_E = 0, f = 1 MHz
V_IN=0.3 V, I_B=1mA, f=1KHz
01-June-2005 Rev. A
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