KTC3879_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
KTC3879
0.05A , 35V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Power Gain
APPLICATIONS
High Frequency Application
HF, VHF Band Amplifier Application
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
CLASSIFICATION OF h_FE
Product-Rank KTC3879-R
Range
40~80
Marking Code
RR
KTC3879-O
70~140
RO
KTC3879-Y
120~240
RY
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
F
REF.
A
B
C
D
E
F
D
G
H
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
J
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
35
30
4
50
150
833
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
-
V IC=100µA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
4
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
µA VCB=30V, IE=0
Collector Cut-Off Current
ICEO
-
-
0.2
µA VCE=25V, IB=0
Emitter Cut-Off Current
IEBO
-
-
1
µA VEB=4V, IC=0
DC Current Gain
hFE
40
-
240
VCE=12V, IC=2mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
0.4
V IC=10mA, IB=1mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
1
V IC=10mA, IB=1mA
Transition Frequency
fT
100
-
-
MHz VCE=10V, IC=1mA
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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