KTC3876_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
KTC3876
0.5A , 35V
NPN Plastic Encapsulated Transistor
FEATURE
High hFE
Complementary to KTA1505
CLASSIFICATION OF h_FE
Product-Rank
KTC3876-O
Range
70~140
Marking Code
WO
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
KTC3876-Y
120~240
WY
KTC3876-GR
200~400
WG
Leader Size
7 inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
35
30
5
500
200
150, -55 ~ 150
1
Base
2
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
µA VCB=35V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µA VEB=5V, IC=0
hFE(1)
70
-
400
VCE=1V, IC=100mA
DC Current Gain
25
hFE(2)
40
O
VCE=6V, IC=400mA
Y
Collector to Emitter Saturation Voltage VCE(sat)
-
-
0.25
V IC=100mA, IB=10mA
Base to Emitter Saturation Voltage
VBE
-
-
1
V IB=100mA, VCE=1V
Transition Frequency
fT
-
300
-
MHz VCE=6V, IC=20mA
Collector output capacitance
Cob
-
7
-
pF VCB=6V, IE=0, f=1MHZ
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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