KTC3265 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER,POWER SWITCHING)

Elektronische Bauelemente
KTC3265
0.8A , 35V
NPN Plastic Encapsulated Transistor
FEATURE
High DC current gain
Complementary to KTA1298
CLASSIFICATION OF h_FE
Product-Rank KTC3265-O
Range
100~200
Marking Code
EO
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
KTC3265-Y
160~320
EY
Leader Size
7 inch
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
35
30
5
800
200
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
µA VCB=30V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µA VEB=5V, IC=0
DC Current Gain
hFE
100
-
320
VCE=1V, IC=100mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
0.5
V IC=500mA, IB=20mA
Base to Emitter Saturation Voltage
VBE
0.5
-
0.8
V IC=10mA, VCE=1V
Transition Frequency
fT
-
120
-
MHz VCE=5V, IC=10mA, f=100MHz
Collector output capacitance
Cob
-
13
-
pF VCB=10V, IE=0, f=1MHZ
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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