KTC3205 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

Elektronische Bauelemente
KTC3205
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage V_CE(sat).
Audio power amplifier
High Current
CLASSIFICATION OF h_FE
Product-Rank
KTC3205-O
Range
100~200
KTC3205-Y
160~320
TO-92L
G
H
J
A
D
1Emitter
2Collector
3Base
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.70 5.10
7.80 8.20
13.80 14.20
3.70 4.10
0.35 0.55
0.35 0.45
1.27 TYP.
1.28 1.58
2.44 2.64
0.60 0.80
Collector
2
3
Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
30
5
2
1
150, -55~150
1
Emitter
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut - Off Current
Emitter cut-off current
DC Current Gain
Collector to Emitter Saturation Voltage
Base – Emitter Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
30
-
-
V IC=1mA, IE=0
V(BR)CEO
30
-
-
V IC=10mA, IB=0
V(BR)EBO
5
-
-
V IE=1mA, IC=0
ICBO
-
-
0.1
µA VCB=30V, IE=0
IEBO
-
-
0.1
µA VEB=5V, IC=0
hFE
100
-
320
VCE=2V, IC=500mA
VCE(sat)
-
-
2
V IC=1.5A, IB=30mA
VBE
-
-
1
V VCE=2V, IC=500mA
fT
-
120
-
MHz VCE=2V, IC=500mA
Cob
-
13
-
pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
15-Nov-2012 Rev. A
Any changes of specification will not be informed individually.
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