KTC3203 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

Elektronische Bauelemente
KTC3203
0.8A , 35V
NPN Plastic-Encapsulated Transistor
FEATURES
Complementary to KTA1271
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
CLASSIFICATION OF h_{FE (1)}
Product-Rank KTC3203-O
KTC3203-Y
Range
100~200
160~320
3
Base
Collector
2
1Emitter
2Collector
3Base
1
Emitter
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
35
30
5
800
625
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
-
V IC=0.1mA, IB=0
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=0.1mA, IC=0
Collector Cut – Off Current
ICBO
-
-
0.1
µA VCB=35V, IE=0
Collector Cut – Off Current
ICEO
-
-
0.2
µA VCE=25V, IB=0
Emitter Cut – Off Current
IEBO
-
-
0.1
µA VEB=5V, IC=0
DC Current Gain
hFE (1)
100
-
320
hFE (2)
35
-
-
VCE=1V, IC=100mA
VCE=1V, IC=700mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.5
V IC=500mA, IB=20mA
Base to Emitter Voltage
VBE
-
-
0.8
V VCE=1V, IC=10mA
Collector Output Capacitance
Cob
-
13
-
pF VCB=10V, IE=0, f=1MHz
Transition Frequency
fT
-
120
-
MHz VCE=5V, IC=10mA
http://www.SeCoSGmbH.com/
27-Mar-2012 Rev. A
Any changes of specification will not be informed individually.
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