KTC3198 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Elektronische Bauelemente
KTC3198
0.15A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
V(BR)CBO=60V
TO-92
CLASSIFICATION OF h_{FE (1)}
Product-Rank KTC3198-O KTC3198-Y KTC3198-GR
Range
70~140
120~240
200~400
Collector
3
2
Base
1
Emitter
1Emitter
2Base
3Collector
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector Current
Power Dissipation
Junction, Storage Temperature
ICM
PCM
TJ, TSTG
150
625
125, -55~125
Unit
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
60
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
50
-
-
V IC=5mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
µA VCB=60V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µA VEB=5V, IC=0
DC Current Gain
70
400
hFE
25
100
VCE=6V, IC=2mA
VCE=6V, IC=150mA
Collector to Emitter Saturation Voltage VCE(sat)
-
0.1 0.25
V IC=100mA, IB=10mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
1
V IC=100mA, IB=10mA
Transition Frequency
fT
80
-
-
MHz VCE=10V, IC=1mA, f=30MHz
http://www.SeCoSGmbH.com/
10-Nov-2011 Rev.B
Any changes of specification will not be informed individually.
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