KTC3197 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

Elektronische Bauelemente
KTC3197
0.05A , 30V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Gain: Gpe=33dB(Typ.) (f=45MHz)
Good Linearity of h_FE
TO-92
3
Base
Collector
2
1Emitter
2Collector
3Base
1
Emitter
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
25
4
50
625
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
25
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
4
-
-
V IE=1mA, IC=0
Collector Cut – Off Current
ICBO
-
-
0.1
µA VCB=30V, IE=0
Emitter Cut – Off Current
IEBO
-
-
0.1
µA VEB=3V, IC=0
DC Current Gain
hFE
20
-
200
VCE=12.5V, IC=12.5mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.2
V IC=15mA, IB=1.5mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
1.5
V IC=15mA, IB=1.5mA
Collector Output Capacitance
Cob
0.8
-
2
pF VCB=10V, IE=0, f=1MHz
Collector-Base Time Constant
CC • rbb
-
-
25
pS VCB=10V, IE= -1mA, f=30MHz
Transition Frequency
fT
300
-
-
MHz VCE=12.5V, IC=12.5mA
Power Gain
Gpe
28
-
36
dB VCE=12.5V, IE=12.5mA, f=45MHz
http://www.SeCoSGmbH.com/
26-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
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