KTC2026 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

Elektronische Bauelemente
KTC2026
3A , 60V
P Plastic-Encapsulated Transistor
FEATURES
Low saturation voltage
General purpose applications
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-220J
CLASSIFICATION OF h_FE
Product-Rank
Y
Range
100-200
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
VCBO
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Power Dissipation
PC
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature
RθJA
TJ, TSTG
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
9.57 10.57
3.54 4.14
2.54 2.94
11.86 13.26
0.97 1.57
0.51 1.11
12.7 13.8
2.540 TYP.
REF.
I
J
K
L
M
N
Q
Millimeter
Min. Max.
4.68 5.48
2.95 3.96
4.27 4.87
1.07 1.47
8.0
10.0
2.03 2.92
0.30 0.65
Rating
60
60
7
3
2
63
150, -55~150
Unit
V
V
V
A
W
°C/ W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Collector to Base Breakdown Voltage V(BR)CBO
60
-
Collector to Emitter Breakdown Voltage V(BR)CEO
60
-
Emitter to Base Breakdown Voltage
V(BR)EBO
7
-
Collector Cut-Off Current
ICBO
-
-
Emitter Cut-Off Current
DC Current Gain
IEBO
-
-
hFE
100
-
Collector to Emitter Saturation Voltage VCE(sat)
-
-
Base to Emitter Voltage
VBE(on)
-
-
Transition Frequency
Collector Output Capacitance
fT
-
30
Cob
-
35
Max.
-
-
-
100
100
200
1
1
-
-
Unit
Test Condition
V IC=0.1mA, IE=0
V IC=50mA, IB=0
V IE=0.1mA, IC=0
µA VCB=60V, IE=0
µA VEB=7V, IC=0
VCE=5V, IC=0.5A
V IC=2A, IB=0.2A
V VCE=5V, IC=0.5A
MHz VCE=5V, IC=0.5A
pF VCB=10V, IE=0, f =1MHz
http://www.SeCoSGmbH.com/
01-Sep-2016 Rev. A
Any changes of specification will not be informed individually.
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