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KTC1027_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Elektronische Bauelemente Transistor
Elektronische Bauelemente
KTC1027
0.8A , 120V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage VCE(sat).
Audio power amplifier
High Current
CLASSIFICATION OF hFE
Product-Rank
KTC1027-O
Range
80~160
KTC1027-Y
120~240
TO-92L
G
H
J
A
D
B
K
E
CF
1Emitter
2Collector
3Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.70 5.10
7.80 8.20
13.80 14.20
3.70 4.10
0.35 0.55
0.35 0.45
1.27 TYP.
1.28 1.58
2.44 2.64
0.60 0.80
Collector
2
3
Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Thermal Resistance
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
120
120
5
0.8
0.75
167
150, -55~150
1
Emitter
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut - Off Current
Emitter cut-off current
DC Current Gain
Collector to Emitter Saturation Voltage
Base – Emitter Voltage
Collector Output Capacitance
Transition Frequency
V(BR)CBO
120
-
-
V IC=1mA, IE=0
V(BR)CEO
120
-
-
V IC=10mA, IB=0
V(BR)EBO
5
-
-
V IE=1mA, IC=0
ICBO
-
-
0.1
µA VCB=120V, IE=0
IEBO
-
-
0.1
µA VEB=5V, IC=0
hFE
80
-
240
VCE=5V, IC=100mA
VCE(sat)
-
-
1
V IC=0.5A, IB=50mA
VBE
-
-
1
V VCE=5V, IC=500mA
Cob
-
-
30
pF VCB=10V, IE=0, f=1MHz
fT
-
120
-
MHz VCE=5V, IC=100mA
http://www.SeCoSGmbH.com/
11-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
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