KTA2014 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Elektronische Bauelemente
KTA2014
-0.15A , -50V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low frequency power amplifier application
Power switching application
CLASSIFICATION OF h_FE
Product-Rank KTA2014-O
Range
70~140
Marking Code
SO
KTA2014-Y
120~240
SY
KTA2014-GR
200~400
SG
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
Leader Size
7 inch
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-50
-50
-5
-150
100
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-50
-
-
V IC= -100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-50
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA VCB= -50V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA VEB= -5V, IC=0
DC Current Gain
hFE
70
-
400
VCE= -6V, IC= -2mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
-0.3
V IC= -100mA, IB=-10mA
Transition Frequency
fT
80
-
-
MHz VCE= -10V, IC= -1mA
Collector output capacitance
Cob
-
-
7
pF VCB= -10V, IE=0, f=1MHz
Noise Figure
VCE= -6V, IC= -0.1mA
NF
-
-
10
dB _{f=1KHz, Rg=10KΩ}
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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