KTA1270 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Elektronische Bauelemente
KTA1270
-0.5A , -35V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
General Purpose Application Switching Application
CLASSIFICATION OF h_FE
Product-Rank
KTA1270-O
Range
hFE (1)
hFE (2)
70~140
25(min)
KTA1270-Y
120~240
40(min)
TO-92
Collector
2
1Emitter
2Collector
3Base
3
Base
1
Emitter
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
-35
V
VCEO
-30
V
VEBO
-5
V
IC
-500
mA
PC
500
mW
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-35
-
-
V IC= -100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-30
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA VCB= -35V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA VEB= -5V, IC=0
DC Current Gain
hFE (1)
70
-
240
hFE (2)
25
-
-
VCE= -1V, IC= -100mA
VCE= -6V, IC= -400mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
-0.25
V IC= -100mA, IB= -10mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-1
V VCE= -1V, IC= -100mA
Transition Frequency
fT
-
200
-
MHz VCE= -6V, IC= -20mA, f=100MHz
Collector Output Capacitance
Cob
-
13
-
pF VCB= -6V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
18-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
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