KBJ10005 Datasheet, PDF (1/2 Pages) HY ELECTRONIC CORP. – SILICON BRIDGE RECTIFIERS

Elektronische Bauelemente
KBJ10005 ~ KBJ1010
Voltage 50V ~ 1000V
10Amp Glass Passivated Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
I_o : 10A
V_RRM : 50~1000V
Glass passivated chip
High surge forward current capability
4KBJ
APPLICATIONS
General purpose 1 phase Bridge
rectifier applications
REF.
A
B
C
D
E
F
G
H
I
Millimeter
Min. Max.
24.7 25.3
14.7 15.3
4.4
4.8
17.0 18.0
3.0 x 45°
3.1
3.4
4.0
3.2
3.4
0.9
1.1
REF.
J
K
L
M
N
P
Q
R
S
Millimeter
Min. Max.
0.6
0.8
7.3
7.7
1.7
2.1
2.0 TYP.
1.05 1.45
3.3
3.8
9.5 10.1
3.1
3.4
3.4
3.8
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol _{KBJ KBJ}
10005 1001
Part Number
KBJ
1002
KBJ
1004
KBJ
1006
KBJ
1008
Maximum Recurrent Peak Reverse Voltage
Average Rectified Output
Current @ 60Hz sine
wave, R-load
With heatsink
TC =80°C
Without heatsink
TA =25°C
VRRM
IO
50 100 200 400 600 800
10
3.6
Surge (Nonrepetitive) Forward Current @
60HZ sine wave, 1 cycle, TJ=25°C
IFSM
150
Current Squared Time ¹
I²t
93
KBJ
1010
1000
Unit
V
A
A
A²S
Dielectric Strength@ Terminals to case，AC 1
minute
VDIS
2
KV
Mounting Torque@ Recommend torque：
5kg.cm
Tor
Peak Forward Voltage@ IFM=5A, Pulse
measurement, Rating of per diode
VFM
Peak Reverse Current@ VRM=VRRM , Pulse
measurement, Rating of per diode
IRRM
8
Kg.cm
1.1
V
10
µA
Thermal Resistance
Without heatsink
With heatsink
Junction and Storage temperature range
Notes：
1. 1ms≤t<8.3ms TJ=25°C ，Rating of per diode
http://www.SeCoSGmbH.com/
25-Jun-2015 Rev. A
RθJA
RθJC
TJ,TSTG
25
2.3
-55~+150
°C / W
°C
Any changes of specification will not be informed individually.
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