GBJL2506 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Voltage 600V 25.0 Amp Low VF Glass Passivited Bridge Rectifiers

Elektronische Bauelemente
GBJL2506
Voltage 600V 25.0 Amp
Low V_F Glass Passivited Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Rating to 600V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
GBJ
REF.
A
B
C
D
E
F
G
H
I
Millimeter
Min. Max.
29.7 30.3
19.7 20.3
4.4
4.8
17.0 18.0
3.0 x 45°
Hold for No. 6
screw
-
5.8
2.5
3.9
0.9
1.1
REF.
J
K
L
M
N
P
Q
R
S
Millimeter
Min. Max.
0.6
0.8
7.3
7.7
2.0
2.4
9.8 10.2
2.3
2.7
3.6
4.2
10.8 11.2
3.1
3.4
3.1
3.8
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Rating
Maximum Recurrent Peak Reverse Voltage
Average Rectified Output
Currentt, 60Hz sine wave,
R-load
with heat sink@ TC=98°C
without heat sink@ TA=25°C
Peak Forward Surge Current 8.3 ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Peak Forward Voltage @ IFM =12.5A , Pulse
measurement, Rating of per diode
Typical
Maximum
Peak Reverse Current@ VRM=VRRM , Pulse measurement,
Rating of per diode
I²t Rating for Fusing ²
Dielectric Strength @ Terminals to case，AC 1 minute
Mounting Torque@ Recommend torque：5kg·cm
Typical Thermal Resistance¹
without heat sink
Typical Thermal Resistance¹
with heat sink
Operating and Storage temperature range
Notes：
1. Device mounted on 30mm*30mm*1.6mm Cu plate heat sink.
2. 1ms≤t<8.3ms Tj=25°C，Rating of per diode
VRRM
I(AV)
IFSM
VFM
IRRM
I²t
Vdis
Tor
RθA
RθJC
TJ,TSTG
600
25
3.5
350
0.88
0.92
10
508
2.5
8
22
1.5
-55~150
Unit
V
A
A
V
µA
A²s
KV
Kg·cm
°C / W
°C / W
°C
http://www.SeCoSGmbH.com/
07-May-2015 Rev. A
Any changes of specification will not be informed individually.
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