FDB101S Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Elektronische Bauelemente
FDB101S ~ FDB107S
Voltage 50V ~ 1000V
1.0 Amp Silicon Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, soldered plated
Plastic material has UL flammability classification 94V-0
DB-1SA
MECHANICAL DATA
Polarity: As marked on Body
Weight:0.016 ounces, 0.45 grams
Mounting position: Any
PACKAGE INFORMATION
Package
MPQ
DB-1SA
1.5K
Leader Size
13 inch
REF.
A
B
D
E
F
G
Millimeter
Min. Max.
8.20 8.40
8.00 8.60
6.10 6.50
2.35 2.65
4.80 5.20
9.40 10.6
REF.
H
J
Millimeter
Min. Max.
0.90 1.50
0.90 1.10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
FDB
101S
FDB
102S
Part Number
FDB
103S
FDB
104S
FDB
105S
FDB
106S
FDB
107S
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700
Maximum DC Blocking Voltage
Maximum Average Forward Output Current
@TA=25°C
Peak Forward Surge Current 8.3 ms Single
Half Sine-Wave Superimposed on Rated
Load (JEDEC Method)
Maximum Forward Voltage @ 1.0 A DC
Maximum DC Reverse Current _TA=25°C
at Rated DC Blocking Voltage _TA=100°C
Maximum Reverse Recovery Time ¹
VDC
IF (AV)
IFSM
VF
IR
TRR
50 100 200 400 600 800 1000
1.0
30
1.1
10
1
150
250
500
Operating and Storage temperature range
Notes:
1. Measured with IF=0.5A, IR=1A, IRR=0.25A
TJ, TSTG
-55~125, -55~150
Unit
V
V
V
A
A
V
µA
mA
ns
°C
06-Mar-2012 Rev. A
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