ES11M_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 1.0 Amp Surface Mount Efficient Fast Rectifiers

Elektronische Bauelemente
ES11M~ES15M
50V ~ 600V
1.0 Amp Surface Mount Efficient Fast Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Small plastic SMD package.
T_RR less than 25nS for high efficiency
Low forward drop down voltage
High surge and high current capability.
Superfast recovery time for switching mode application.
Glass-passivated chip junction.
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94-V0 rate flame retardant
Weight: 0.0270 g (approximately)
MARKING
Part Number
ES11M
ES12M
ES13M
Marking
E3
E3
E3
Part Number
ES14M
ES15M
Marking
E4
E5
SOD-123M
A
B
F
D
C
E
E
REF.
A
B
C
Millimeter
Min. Max.
3.50 3.90
1.40 1.80
1.30 1.70
REF.
D
E
F
Millimeter
Min. Max.
3.60 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
PACKAGING INFORMATION
Package
MPQ
SOD-123M
2.5K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameters
Symbol
ES11M
Part Number
ES12M ES13M ES14M
Units
ES15M
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
V
Maximum Reverse Voltage
VR
50
100
200
400
600
V
Maximum Forward Voltage @ IF=1A
VF
Maximum Average Forward Rectified Current
@TA=55°C
IO
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load (JEDEC
IFSM
method)
0.875
1.25
1.75
V
1.0
A
30
A
Maximum DC Reverse Current at
TA=25°C
Rated DC Blocking Voltage
IR
TA=125°C
5
µA
100
Reverse Recovery Time
TRR
Typical Junction Capacitance ¹
CJ
25
nS
15
pF
Storage and Operating Temperature Range
TSTG, TJ
-65~175, -55~150
°C
Note:
1. f=1MHz and applied 4V DC reverse voltage
http://www.SeCoSGmbH.com/
09-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
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