EMX1_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistors

Elektronische Bauelemente
EMX1
0.15 W, 150 mA, 60 V
Plastic-Encapsulated
General Purpose Transistors (Dual)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Two 2SC2412K chips in a SOT-563 package.
z Mounting possible with SOT-563 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area can be cut in half.
MARKING
X1
1
EQUIVALENT CIRCUIT
(3) (2) (1)
.012(0.30)
.004(0.10)
.067(1.70)
.059(1.50)
Tr1
Tr2
SOT-563
.051(1.30)
.043(1.10)
.002(0.05)
.000(0.00)
.022(0.55)
.018(0.45)
.011(0.27)
.007(0.17)
.067(1.70)
.059(1.50)
7^o REF.
.024(0.60)
.021(0.525)
.006(0.16)
.004(0.09)
(4) (5) (6)
7^o RE .
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction & Storage temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
60
50
7
0.15
0.15
150, -55~150
Unit
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V_(BR)CBO
60
-
-
V_(BR)CEO
50
-
-
V_(BR)EBO
7
-
-
I_CBO
-
-
0.1
I_EBO
-
-
0.1
h_FE
120
-
560
V_CE(sat)
-
-
0.4
f_T
-
180
-
C_ob
-
2.0
3.5
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I_C=50μA, I_E=0
I_C=1mA, I_B=0
I_E=50μA, I_C=0
V_CB=60V, I_E=0
V_EB=7V, I_C=0
V_CE=6V, I_C=1mA
I_C=50mA, I_B=5mA
V_CE=12V, I_C=2mA, f=100MHz
V_CB=12V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
01-June-2005 Rev. A
Any changes of specification will not be informed individually.
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