EMT1_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistors

Elektronische Bauelemente
EMT1
Dual PNP
Plastic-Encapsulated Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Mounting Possible With SOT-563 Automatic Mounting Machines.
Transistor elements are independent, eliminating interference.
SOT-563
A
MARKING
T1
PACKAGE INFORMATION
Package
MPQ
SOT-563
3K
Leader Size
7 inch
B
J
D
C
F
G
H
E
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.50 1.70
1.50 1.70
0.525 0.600
1.10 1.30
0.05 REF.
REF.
F
G
H
J
Millimeter
Min. Max.
0.09 0.16
0.45 0.55
0.17 0.27
0.10 0.30
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction & Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
-60
-50
-6
-150
150
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage V(BR)CBO -60
-
-
V
Collector-Emitter Breakdown Voltage V(BR)CEO -50
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
-
-
V
Collector Cut-Off Current
ICBO
-
-
-0.1
µA
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA
DC Current Gain
hFE
120
-
560
Collector-Emitter Saturation Voltage VCE(sat)
-
-
-0.5
V
Transition Frequency
fT
-
140
-
MHz
Collector Output Capacitance
Cob
-
-
5
pF
Test Conditions
IC= -50µA, IE=0
IC= -1mA, IB=0
IE= -50µA, IC=0
VCB= -60V, IE=0
VEB= -7V, IC=0
VCE= -6V, IC= -1mA
IC= -50mA, IB= -5mA
VCE= -12V, IC= -2mA, f=100MHz
VCB= -12V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
07-Dec -2012 Rev. A
Any changes of specification will not be informed individually.
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