EMH3 Datasheet, PDF (1/2 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – DIGITAL TRANSISTOR (NPN+ NPN)

Elektronische Bauelemente
EMH3
Dual NPN Digital Transistors
(Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Two DTC143T chips in a UMT package.
The elements of transistors are independent without
interference.
With this package, the mounting cost and space can
be cut into half.
B
EQUIVALENT CIRCUIT
C
SOT-563
A
J
D
F
G
H
E
MARKING
H3
PACKAGE INFORMATION
Package
MPQ
SOT-563
3K
Leader Size
7 inch
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.50 1.70
1.50 1.70
0.525 0.60
1.10 1.30
-
0.05
REF.
F
G
H
J
Millimeter
Min. Max.
0.09 0.16
0.45 0.55
0.17 0.27
0.10 0.30
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Parameter
Symbol
Collector-Base Voltage
V(BR)CBO
Collector-Emitter Voltage
Emitter-Base Voltage
V(BR)CEO
V(BR)EBO
Collector Current
IC
Collector Power Dissipation
PC
Junction and Storage Temperature
TJ, TSTG
Value
50
50
5
100
150
150, -55~150
Unit
V
V
V
mA
mW
°C
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C)
Parameter
Symbol Min.
Typ.
Max. Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
50
-
Collector-Emitter Breakdown Voltage
V(BR)CEO
50
-
-
IC=50µA, IE=0
V
-
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=50µA, IC=0
Collector Cut-Off Current
ICBO
-
-
500
nA VCB=50V, IE=0
Emitter Cut-Off Current
IEBO
-
-
500
nA VEB=4V, IC=0
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
0.3
V IC=5mA, IB=0.25mA
DC Current Transfer Ration
hFE
100
-
600
VCE=5V, IC=1mA
Input Resistance
R1
3.29
4.7
6.11
KΩ
Transition Frequency
fT
-
250
-
MHz VCE=10V, IE= -5mA, f=100MHz
http://www.SeCoSGmbH.com/
28-Mar-2016 Rev. A
Any changes of specification will not be informed individually.
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