EBS101_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 1.0 Amp Silicon Bridge Rectifiers

Elektronische Bauelemente
EBS101 ~ EBS107
Voltage 50V ~ 1000V
1.0 Amp Silicon Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Ideal for printed circuit board
 Lead tin plated copper
 Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
EBS
MECHANICAL DATA
 Polarity:Symbol molded on body
 Mounting position :Any
PACKAGE INFORMATION
Package
MPQ
EBS
5K
Leader Size
13 inch
REF.
A
B
C
D
Millimeter
Min. Max.
4.9
5.1
6.0
6.4
3.9
4.1
3.2
3.5
REF.
E
F
G
H
Millimeter
Min. Max.
0.6
0.7
5.3
5.5
1.15 1.27
0.15 0.25
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Part Number
Symbol _{EBS EBS EBS EBS EBS EBS}
101
102
103
104
105
106
Maximum Recurrent Peak Reverse Voltage
V_RRM
50 100 200 400 600 800
Maximum RMS Bridge Input Voltage
V_RMS
35
70 140 280 420 560
Maximum DC Blocking Voltage
V_DC
50 100 200 400 600 800
Maximum Average Forward Rectified Output
I_F
1
Peak Forward Surge Current 8.3 ms Single Half
Sine-Wave Super Imposed on Rated Load
I_FSM
30
(JEDEC Method)
Maximum Forward Voltage @ 1A
V_F
1.1
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T_J=25°C
T_J=100°C
I_R
5
200
Typical Thermal resistance junction to case ¹
RθJC
20
Typical Thermal resistance junction to Lead ¹
RθJL
22
Typical Thermal resistance junction to Ambient ¹
RθJA
42
Operating and Storage temperature range
T_J,T_STG
-55~150
Note:
1. Thermal Resistance test performed in accordance with JESD-51. Unit mounted on Aluminum substrate _ 15 x 15 x 1.6mm.
EBS
107
1000
700
1000
Unit
V
V
V
A
A
V
μA
°C / W
°C / W
°C / W
°C
http://www.SeCoSGmbH.com/
23-Dec-2014 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2