DTA114TE Datasheet, PDF (1/2 Pages) Rohm – Digital transistors (built in resistor)

Elektronische Bauelemente
DTA114TE / DTA114TUA / DTA114TCA /
DTA114TSA
PNP Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors.
 The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
 Only the on/off conditions need to be set for
operation, making device design easy.
DTA114TE (SOT-523)
DTA114TUA (SOT-323)
EQUIVALENT CIRCUIT
Addreviated symbol：94
DTA114TSA (TO-92S)
Addreviated symbol：94
DTA114TCA (SOT-23)
Addreviated symbol：94
ABSOLUTE MAXIMUM RATINGS at (T_A = 25°C unless otherwise noted)
Parameter
Symbol
LIMITS(DTA114T□)
E
UA
CA
SA
Collector-Base Voltage
V_CBO
-50
Collector-Emitter Voltage
V_CEO
-50
Emitter-Base Voltage
V_EBO
-5
Collector Current-Continuous
I_C
-100
Collector Dissipation
P_C
150
200
300
Junction & Storage temperature
T_J, T_STG
150, -55~150
Unit
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS at (T_A = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max. _{Unit Test Conditions}
Collector-base breakdown voltage V_(BR)CBO
-50
-
Collector-emitter
breakdown voltage
V_(BR)CEO
-50
-
-
I_C= -50A, I_E= 0
V
-
I_C= -1mA, I_B= 0
Emitter-base breakdown voltage
V_(BR)EBO
-5
-
-
V I_E= -50A, I_C=0
Collector cut-off current
I_CBO
-
-
-0.5
A V_CB= -50V, I_E=0
Emitter cut-off current
I_EBO
-
-
-0.5
A V_EB= -4V, I_C=0
DC current gain
h_FE
100
250
600
V_CE= -5V, I_C= -1mA
Collector-emitter
saturation voltage
Transition frequency
Input resistor
V_CE(sat)
-
f_T
-
R1
7
-
-0.3
V I_C= -10mA, I_B= -1mA
250
-
MHz
V_CE= -10V, I_C= -5mA,
f= 100MHz
10
13
kΩ
http://www.SeCoSGmbH.com/
11-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
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