DB101_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 1.0 Amp Surface Mount Bridge Rectifiers

Elektronische Bauelemente
DB101 ~ DB107
VOLTAGE 50 V ~ 1000 V
1.0 Amp Surface Mount Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low forward voltage drop, high current capability
 Rating to 1000V PRV
 Ideal for printed circuit board
 Reliable low cost construction utilizing molded plastic technique
results in inexpensive products
 Lead tin Pb / Sn copper
 The plastic material has UL flammability classification 94V-0
DB-1
D
FJ
CA
G
MECHANICAL DATA
 Polarity: As marked on Body
 Mounting position: Any
HE
B
REF.
A
B
C
D
E
Millimeter
Min. Max.
8.00 9.30
7.60 8.90
2.90 3.40
6.20 6.50
5.00 5.20
REF.
F
G
H
J
Millimeter
Min. Max.
0.55 REF.
1.50 REF.
3.80 4.70
-
-
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
PARAMETERS
Peak Repetitive Peak Reverse Voltage
SYMBOL
DB
DB
DB
DB
DB
DB
101
102
103
104
105
106
V_RRM
50 100 200 400 600 800
Working Peak Reverse Voltage
V_RMS
35
70 140 280 420 560
DC Blocking Voltage
V_DC
50 100 200 400 600 800
Maximum Average Forward Rectified
Current @T_A=40℃
I_(AV)
1
Peak Forward Surge Current 8.3 ms Single
Half Sine-Wave Super Imposed on Rated
I_FSM
50
Load (JEDEC Method)
Maximum Forward Voltage at 1A DC
V_F
1.1
Maximum DC Reverse Current ^TJ=25℃
at Rated DC Blocking Voltage _TJ=125℃
I_R
10
500
I²t Rating for Fusing (t<8.3ms)
I²t
10
Typical Junction Capacitance Per Element
(Note1)
C_J
25
Typical Thermal Resistance (Note2)
R_θJA
40
Operating and Storage temperature range
T_J, T_STG
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC
2. Device mounted P.C.B with 0.47x0.47''(12mmx12mm) Copper Pads.
-55 ~ 150
DB
107
1000
700
1000
UNIT
V
A
A
V
uA
A²s
pF
℃/W
℃
http://www.SeCoSGmbH.com/
15-Nov-2014 Rev. B
Any changes of specification will not be informed individually.
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