D882 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors

Elektronische Bauelemente
D882
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Features
MAXIMUM RATINGS* T_A=25^oC unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
40
V
V_CEO
Collector-Emitter Voltage
30
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current –Continuous
3
A
P_C
Collector Dissipation
1.25
W
P_D
Total Device Dissipation
1.25
W
T_J, T_stg
Junction and Storage Temperature
-55-150
o_C
TO-126
8.0±0.2
3.2±0.2
2.0±0.2
11.0±0.2
4.14±0.1
O2.8±0.1
O3.2±0.1
1.4±0.1
12 3
15.3±0.2
1.27±0.1
0.76±0.1
4.55±0.1
2.28 Typ.
0.5± 0.1
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)_CEO
V(BR)EBO
ICBO
ICEO
I_EBO
h_FE(1)
hFE(2)
VCE(sat)
V_BE(sat)
fT
Test conditions
Ic=100uA ,IE=0
I_C= 10 mA , I_B=0
IE= 100 mA ,IC=0
VCB=40 V , IE=0
VCE=30 V , IB=0
V_EB=6V , I_C=0
V_CE= 2V, I_C= 1A
VCE=2V, IC= 100mA
IC=2A, IB= 0.2A
I_C=2A, I_B= 0.2A
V_CE=5 V, I_C=0.1mA
f = 10MHz
MIN
40
30
6
60
32
50
TYP
MAX
1
10
1
400
UNIT
V
V
V
uA
uA
uA
0.5
V
1.5
V
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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