D10JB05 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 50V ~ 1000V, 10A Glass Passivated Bridge Rectifiers

Elektronische Bauelemente
D10JB05 ~ D10JB100
50V ~ 1000V, 10A
Glass Passivated Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
JB
I_o : 10A
V_RRM : 50~1000V
Glass passivated chip
High surge forward current capability
APPLICATIONS
General purpose 1 phase Bridge
rectifier applications
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
24.7 25.3
11.4 12.0
10.0 10.6
7.3 7.7
1.2 1.4
1.35 1.55
0.9 1.1
REF.
H
I
J
K
L
M
N
Millimeter
Min. Max.
14.6 15.2
3.9 4.5
2.9 3.9
3.1 3.4
5.4 6.0
2.0 2.6
0.4 0.6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol _D10
JB05
D10
JB10
Part Number
D10 D10 D10
JB20 JB40 JB60
D10
JB80
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800
With heatsink
Average Rectified Output _{TC =95°C}
10
Current @ 60Hz sine
IO
wave, R-load
Without heatsink
3.2
TA =25°C
Non-repetitive Surge Forward Current @ 60Hz
sine wave, 1 cycle, TJ=25°C
IFSM
150
Current Squared Time ¹
I²t
93
Dielectric Strength@ Terminals to case,
AC 1 minute
VDIS
2
Mounting Torque@ Recommend torque:
5kg．cm
Tor
8
Peak Forward Voltage@ IFM=5A, pulse
measurement, rating of per diode
VFM
1.1
Peak Reverse Current@ VRM=VRRM , Pulse
measurement, Rating of per diode
IRRM
10
Thermal Resistance from Junction to
Ambient@ without heatsink
RθJA
28
Thermal Resistance from Junction to
Case@ with heatsink
RθJC
2.8
Junction and Storage Temperature Range
Notes：
1. 1ms≦t＜8.3ms, TJ=25°C, rating of per diode.
TJ, TSTG
150, -55~+150
D10
JB100
1000
Unit
V
A
A
A²S
KV
kg．cm
V
µA
°C / W
°C / W
°C
http://www.SeCoSGmbH.com/
22-Apr-2016 Rev. A
Any changes of specification will not be informed individually.
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