CZT5551 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

Elektronische Bauelemente
CZT5551
NPN Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The CZT5551 is designed for general
purpose applications requiring high
breakdown voltages.
5 5 51
MAXIMUM RATINGS* (T_amb =25^oC , unless otherwise specified)
REF. _Min.
A 6.70
C 2.90
D 0.02
E
0̓
I 0.60
H 0.25
Max.
7.30
3.10
0.10
10̓
0.80
0.35
REF.
B
J
1
2
3
4
5
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Symbol
V_CBO
VCEO
VEBO
IC
PD
TJ,Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Power Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS Tamb=25^oC unlessotherwise specified
Parameter
Symbol
MIN
TYP MAX
Collector-base breakdown voltage
V(BR)_CBO
180
_
_
Collector-emitter breakdown voltage _V(BR)CEO
160
_
_
Emitter-base breakdown voltage
Collector cut-off current
V(BR)_EBO
6
ICBO
_
_
_
_
50
Emitter cut-off current
DC current gain
I_EBO
hFE 1
hFE 2
hFE 3
_
_
50
80
_
_
80
160
400
50
_
_
Collector-emitter saturation voltage
V_CE(sat) ₁
V_CE(sat) ₂
_
_
Base-emitter saturation voltage
V_BE(sat) ₁
_
V_BE(sat)₂
_
_
0.15
_
0.2
_
1
_
1
Transition frequency
fT
100
_
300
Collector output capacitance
Cob
_
_
6
Value
180
160
6
600
1.5
-55~-150
Units
V
V
V
mA
W
C^O
UNIT
V
V
V
nA
nA
_
_
_
V
V
MHz
pF
Test conditions
Ic= 100u A,IE=0
IC= 1mA,IB=0
IE= 10uA,IC=0
V_CB= 120V,IE=0
V_EB= 4V,IC=0
V_CE= 5V, I_C= 1mA
V_CE= 5V, I_C= 10mA
V_CE= 5V, I_C= 50mA
IC= 10mA,IB= 1mA
IC= 50mA,IB= 5mA
IC= 10mA,IB= 1mA
IC= 50mA,IB= 5mA
V_CE= 10V,IC= 10mA ,
f = 100MHz
V_CB= 10V, f=1MHz,IE=0
CLASSIFICATION OF hFE
Rank
A
N
Range
80-200
100-240
C
160-400
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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