CZT5401 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR

Elektronische Bauelemente
CZT5401
PNP Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The CZT5401 is designed for general
purpose applications requiring high
breakdown voltages.
5401
MAXIMUM RATINGS* (T_amb =25^oC , unless otherwise specified)
REF. _Min.
A 6.70
C 2.90
D 0.02
E
0̓
I 0.60
H 0.25
Max.
7.30
3.10
0.10
10̓
0.80
0.35
REF.
B
J
1
2
3
4
5
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Symbol
V_CBO
VCEO
VEBO
IC
PD
TJ,Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Power Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS Tamb=25^oC unlessotherwise specified
Parameter
Symbol
MIN
TYP MAX
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)_CBO
V(BR)_CEO
V(BR)_EBO
ICBO
I_EBO
hFE 1
hFE 2
hFE 3
V_CE(sat) ₁
V_CE(sat) ₂
V_BE(sat) ₁
V_BE(sat)₂
-160
-150
-5
_
_
50
80
50
_
_
_
_
_
_
_
_
_
_
_
-50
_
-50
_
_
160
400
_
_
_
-200
_
-500
_
-1
_
-1
Transition frequency
fT
100
_
300
Collector output capacitance
Cob
_
_
6
Value
-160
-150
-5
-600
1.5
-55~-150
Units
V
V
V
mA
W
C^O
UNIT
V
V
V
nA
nA
_
_
_
mV
V
MHz
pF
Test conditions
Ic=-100u A,IE=0
IC= -1mA,IB=0
IE= -10uA,IC=0
V_CB= -120V,IE=0
V_EB=-3V,IC=0
V_CE= -5V, I_C= -1mA
V_CE=-5V, I_C= -10mA
V_CE= -5V, I_C= -50mA
IC=-10mA,IB= -1mA
IC=-50mA,IB= -5mA
IC=-10mA,IB= -1mA
IC=-50mA,IB= -5mA
V_CE=-10V,IC=-10mA ,
f = 100MHz
V_CB=-10V, f=1MHz,IE=0
CLASSIFICATION OF hFE
Rank
A
N
Range
80-200
100-240
C
160-400
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2