CZT31C Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

Elektronische Bauelemente
CZT31C
3A, 100V
P Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Complementary to CZT32C
Power amplifier applications up to 3 Amps.
MARKING
CZT31C
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector-Base Voltage
VCBO
100
Collector-Emitter Voltage
VCEO
100
Emitter-Base Voltage
VEBO
5
Collector Current-Continuous
IC
3
Collector Power Dissipation
PD
1
Junction and Storage Temperature
TJ, TSTG
150, -65~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
V(BR)CBO
100
-
-
Collector-Emitter Breakdown Voltage V(BR)CEO
100
-
-
Emitter-Base Breakdown Voltage
V(BR)EBO
5
-
-
Collector Cut-off Current
ICBO
-
-
200
Base Cut-off Current
ICEO
-
-
300
Emitter Cut-off Current
IEBO
-
-
1
DC Current Gain ¹
hFE(1)
25
hFE(2)
10
Collector-Emitter Saturation Voltage ¹ VCE(sat)
-
Base-Emitter Voltage ¹
VBE(on)
-
-
-
-
100
-
1.2
-
1.8
Transition Frequency
Note:
1. Pulsed, 2%D.C.
fT
3
-
-
Unit
V
V
V
uA
uA
mA
V
V
MHz
Test Condition
IC=1mA , IE=0
IC=30mA, IB=0
IC=0, IE=3mA
VCB=100V, IE=0
VCE=60V, IB=0
VEB=5V, IC=0
VCE=4V, IC=1A
VCE=4V, IC=3A
IC=3A, IB=375mA
VCE=4V, IC=3A
VCE=10V, IC=0.5A, f=1MHz
http://www.SeCoSGmbH.com/
17-Feb-2017 Rev. A
Any changes of specification will not be informed individually.
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