CZD772 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Type Plastic Encapsulate Transistors

CZD772
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
RoHS Compliant Product
TO-252(D-Pack)
FEATURES
6. 50 0. 15
5. 30 0. 10
2. 30 0. 10
Power Dissipation
PCM: 10 W ( Ta = 25 C )
Collector Current
ICM: -3 A
Collector-Base Voltage
V(BR)CBO: - 40 V (min)
Designed for use in output stage of
10W amplifier, voltage regulature,
DC-DC converter and relay driver.
0. 51 0. 05
0. 51 0. 10 ^{1. 20}
0 0. 10
5
0. 80 0. 10
5
5
2. 30 0. 10
0. 60 0. 10
2. 30 0. 10
1
2
3
09
0. 51
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
Parameter
Symbol
Value
Units
1. BASE
2. COLLECTOR
3. EMITTER
Collector-Base Voltage
V_CBO
-40
V
Collector-Emitter Voltage
V_CEO
-30
V
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Power Dissipation
V_EBO
I_C
I_C
I_B
P_D
-5
V
-3
A
-7
A
-0.6
A
10
W
Junction, Storage Temperature
T_J, T_STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Units
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Power Dissipation
Transition Frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
*h_FE1
*h_FE2
*V_CE(sat)
*V_BE(sat)
C_ob
f_T
I_C = -100 A, I_E = 0
-40
V
I_C = -1mA, I_B = 0
-30
V
I_E = -10 A, I_C = 0
5
V
V_CB = -30V, I_E = 0
-1
A
V_EB = -3V, I_C = 0
-1
A
V_CE = -2V, I_C = -20mA
30
V_CE = -2V, I_C = -1A
100
500
I_C = -2A, I_B = -0.2A
-0.3 -0.5 V
I_C = -2A, I_B = -0.2A
-1 -2
V
V_CB = -10V, I_E = 0, f = 1MHz
55
pF
V_CE = -5V, I_C = -0.1A, f = 100 MHz
80
MHz
*Pulse Test: Pulse Width 380ms, Duty Cycle 2%
h_FE VALUES ARE CLASSIFIED AS FOLLOWS:
ITEM
Q
P
hFE
100 ~ 200
160 ~ 320
E
250 ~ 320
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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