CZD5706 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Silicon Transistor

Elektronische Bauelemente
CZD5706
5 A, 80 V
NPN Epitaxial Silicon Transistor
DESCRIPTION
The CZD5706 is designed for high current switching application.
FEATURES
♦ Large Current Capacitance
♦ Low Collector to Emitter Saturation Voltage
♦ High-Speed Switching
♦ High Allowable Power Dissipation
MARKING
Collector
2
5706
Date Code
1
Base
1
BCE
3
Emitter
SWITCHING TIME TEST CIRCUIT
D-Pack (TO-252)
A
B
C
D
GE
K
HF
N
O
P
M
J
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
6.35 6.80
5.20 5.50
2.20 2.40
0.40 0.60
6.40 7.35
2.20 3.00
5.40 5.80
0.60 1.20
REF.
J
K
L
M
N
O
P
Millimeter
Min. Max.
2.30 TYP.
0.70 0.90
0.50 0.70
0.60 1.00
1.40 1.78
0.00 1.27
0.43 0.58
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Total Power Dissipation (TA=25°C)
Total Power Dissipation (TC=25°C)
Junction, Storage Temperature
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PD
PD
TJ, TSTG
80
80
50
6
5
7.5
1.2
0.8
15
150, -55~150
UNIT
V
V
V
V
A
A
A
W
W
°C
ElECTRICAL CHARACTERISTICS (T_A = 25°C, unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Voltage, On
DC Current Gain
Transition Frequency
Output Capacitance
Turn-On Time
Storage Time
Fall Time
BVCBO
BVCES
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)
hFE
fT
COB
TON
TSTG
TF
80
-
-
80
-
-
50
-
-
6
-
-
-
-
1
-
-
1
-
-
135
-
-
240
-
-
1.2
200
-
560
-
400
-
-
15
-
-
35
-
-
300
-
-
20
-
UNIT
V
V
V
V
µA
µA
mV
mV
V
MHz
pF
nS
nS
nS
TEST CONDITIONS
IC=10µA, IE=0
IC=100µA, RBE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
01-June-2009 Rev. A
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