CZD41C_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente
CZD41C
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Monolithic Construction With Built–in Base–Emitter Resistors
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Designed for General Purpose Amplifier and Low Speed
S witching Applications.
TO-252 (D-Pack)
A
B
C
D
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
GE
1
Base
Collector
2
3
Emitter
K
HF
N
O
P
M
J
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.30 REF.
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F
2.80 REF
P
0.58REF.
G 5.40 6.40
H 0.60 1.20
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
100
Collector to Emitter Voltage
VCEO
100
Emitter to Base Voltage
VEBO
5
Collector Current
IC
6
Collector Power Dissipation
PC
1.25
Junction and Storage Temperature
TJ,TSTG
150, -65 ~ 150
Unit
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Symbol
Min. Typ. Max.
Collector-base breakdown voltage
V(BR)CBO
100
-
-
Collector-emitter breakdown voltage
VCEO(SUS)
100
-
-
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
Collector cut-off current
ICEO
-
-
50
Emitter cut-off current
IEBO
-
-
0.5
DC current gain ¹
Collector-emitter saturation voltage ¹
Base-emitter saturation voltage ¹
hFE
VCE(sat)
VBE(on)
30
-
-
15
-
75
-
-
1.5
-
-
2
Transition frequency
fT
3
-
-
Unit Test Conditions
V IC=100µA, IE=0
V IC=30mA, IB=0
V IE=100µA, IC=0
µA VCB=60V, IE=0
mA VEB=5V, IC=0
VCE=4V, IC=0.3A
VCE=4V, IC=3A
V IC=6A, IB=0.6A
V
MHz
VCE=4V, IC=6A
VCE=10V, IC= 500mA,
f=1MHz
http://www.SeCoSGmbH.com/
13-Oct-2014 Rev. A
Any changes of specification will not be informed individually.
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