CZD3303 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente
CZD3303
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Speed Switching Time
Low Collector Saturation Voltage
CLASSIFICATION OF h_FE
Rank CZD3303-O CZD3303-Y
Range
70~140
120~240
TO-252 (D-Pack)
A
B
GE
1. Base
2. Collector
3. Emitter
C
D
K HF
N
O
P
M
J
PACKAGE INFORMATION
Package
TO-252
MPQ
2.5K
Leader Size
13 inch
Collector
2
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.30 REF.
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F
2.80 REF
P
0.58REF.
G 5.40 6.40
H 0.60 1.20
Parameter
Collector to Base Voltage
Symbol
VCBO
Ratings
100
Unit
V
Collector to Emitter Voltage
VCEO
80
V
Emitter to Base Voltage
Collector Current
VEBO
IC
7
V
5
A
Collector Power Dissipation
PC
1
W
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RθJA
TJ,TSTG
125
150, -55 ~ 150
°C / W
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Symbol
Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
100
-
-
V(BR)CEO
80
-
-
Emitter-base breakdown voltage
V(BR)EBO
7
-
-
Collector cut-off current
ICBO
-
-
1
Emitter cut-off current
IEBO
-
-
1
DC current gain ¹
70
-
240
hFE
40
-
-
Collector-emitter saturation voltage
VCE(sat)
-
-
0.4
Base-emitter saturation voltage
VBE(sat)
-
-
1.2
Collector output capacitance
Transition frequency
Cob
-
80
-
fT
-
20
-
Unit Test Conditions
V IC=100µA, IE=0
V IC=10mA, IB=0
V IE=100µA, IC=0
µA VCB=100V, IE=0
µA VEB=7V, IC=0
VCE=1V, IC=1A
VCE=1V, IC=3A
V IC=3A, IB=0.15A
V VCE=3V, IC=0.15A
pF VCE=10V, IE=0, f=1MHz
MHz VCE=4V, IC= 1A
http://www.SeCoSGmbH.com/
04-Nov-2014 Rev. A
Any changes of specification will not be informed individually.
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