CZD2983_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente
CZD2983
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The CZD2983 is designed for power amplifier and
driver stage amplifier applications.
D-Pack (TO-252)
FEATURES
 High transition frequency：f_T = 100MHz (Typ.)
 Complements to CZD1225
CLASSIFICATION OF Hfe
Rank
Range
CZD2983-O
70 ~ 140
CZD2983-Y
120 ~ 240
MARKING
2983
 Date Code
2
1
3
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
B
C
D
GE
K
HF
N
O
P
M
J
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J
2.30 REF.
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F
2.80 REF
P
0.58REF.
G 5.40 6.40
H 0.60 1.20
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
V_CBO
160
Collector to Emitter Voltage
V_CEO
160
Emitter to Base Voltage
V_EBO
5
Collector Current
I_C
1.5
Base Current
I_B
0.3
Total Device Dissipation
T_A=25°C
P_D
1
T_C=25°C
P_D
15
Junction Temperature
T_J
150
Storage Temperature
T_STG
-55 ~ 150
Unit
V
V
V
A
A
W
W
℃
℃
http://www.SeCoSGmbH.com/
21-Jan-2013 Rev. B
Any changes of specification will not be informed individually.
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