CZD2983J Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente
CZD2983J
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
CZD2983J is designed for power amplifier and
driver stage amplifier applications.
D-Pack (TO-252)
FEATURES
High transition frequency
CLASSIFICATION OF h_FE
Product-Rank CZD2983J-O
Range
70~140
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
A
B
C
D
CZD2983J-Y
120~240
Leader Size
13 inch
1
Base
GE
Collector
2
3
Emitter
K HF
N
O
P
M
J
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.186 2.386
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F
2.90 REF
P
0.58REF.
G 5.40 6.40
H 0.60 1.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Power Dissipation
PC
Thermal Resistance from Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, TSTG
Rating
160
160
5
1.5
1
125
150, -55~150
Unit
V
V
V
A
W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage ¹
BVCBO
160
-
-
BVCEO
160
-
-
Emitter-Ease Breakdown Voltage
BVEBO
5
-
-
Collector Cut-Off Current
ICBO
-
-
1
Emitter Cut-Off Current
IEBO
-
-
1
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
1.5
Base-Emitter Voltage
VBE
-
-
1
DC Current Gain
hFE
70
-
240
Transition Frequency
fT
-
100
-
Collector Output Capacitance
Notes:
1. Pulse test.
COB
-
25
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Condition
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
VEB=5V, IC=0
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=100mA
VCE=10V, IC=100mA
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
17-Nov-2015 Rev. A
Any changes of specification will not be informed individually.
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