CZD2983 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente
CZD2983
NPN Epitaxial Planar Silicon Transistor
DESCRIPTION
The CZD2983 is designed for power amplifier and driver stage amplifier
applications.
D-Pack (TO-252)
FEATURES
 High transition frequency：f_T = 100MHz (Typ.)
 Complements to CZD1225
MARKING
2983
 Date Code
2
1
3
Collector


Base

Emitter
A
B
C
D
GE
K
HF
N
O
P
M
J
Millimeter
Millimeter
REF. _{Min. Max.} REF. _{Min. Max.}
A 6.4
6.8
J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Device Dissipation
(T_A=25°C)
Total Device Dissipation
(T_C=25°C)
Junction Temperature
Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
P_D
T_J
T_STG
Ratings
160
160
5
1.5
0.3
1
15
150
-55 ~ 150
Unit
V
V
V
A
A
W
W
℃
℃
http://www.SeCoSGmbH.com/
03-Sep-2010 Rev. A
Any changes of specification will not be informed individually.
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