CZD1386 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Epitaxial Silicon Transistor

Elektronische Bauelemente
DESCRIPTION
The CZD1386 is designed for low frequency applications.
FEATURES
z Low V_CE(sat) = -0.55V(Typ.) (I_C/I_B = -4 A/ -0.1 A)
z Excellent DC current gain characteristics
PACKAGE DIMENSIONS
CZD1386
-5 A, -30 V
PNP Epitaxial Silicon Transistor
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 Ref.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0
0.15
0.90 1.50
5.40 5.80
0.80 1.20
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
*Collector Current (Pulse)
Total Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_C
Pc
T_J, T_STG
Ratings
-30
-20
-6
-5
-10
20
+150, -55 ~ +150
Unit
V
V
V
A
A
W
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-30
-20
-6
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
120
60
Max.
-
-
-
-500
-500
-1
580
-
-
CLASSIFICATION OF h_FE1
Rank
P
Range
82 - 180
Q
120 - 270
Unit
V
V
V
nA
nA
mV
MHz
pF
Test Conditions
I_C=-50uA
I_C=-1mA
I_E=-50uA
V_CB=-20V
V_EB=-5V
I_C=-4A, I_B=-0.1mA
V_CE=-2V, I_C=-0.5mA
V_CE=-6V, I_E=50mA, f=30MHz
V_CB=-20V, I_E=0, f=1MHz
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
R
180 - 390
E
370 - 580
01-June-2002 Rev. A
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