CZD1182_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
CZD1182
-2A , -40V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Designed for general
 Low VCE(sat)
D-Pack (TO-252)
CLASSIFICATION OF h_FE
Product-Rank
CZD1182-Q
Range
120~270
CZD1182-R
180~390
A
B
C
D
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction and Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J ,T_STG
-40
-32
-5
-2
1.5
150 , -55~150
GE
K
HF
N
O
P
M
J
REF. ^Millimeter REF. ^Millimeter
Min. Max.
Min. Max.
A 6.35 6.8
J
2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8
7.5 O
0
0.15
F 2.40
3.0
P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max.
Collector-base breakdown voltage
V_(BR)CBO
-40
-
-
Collector-emitter breakdown voltage
V _(BR)CEO
-32
-
-
Emitter-base breakdown voltage
V_(BR)EBO
-5
-
-
Collector cut-off current
I_CBO
-
-
-1
Emitter cut-off current
I_EBO
-
-
-1
DC current gain
h_FE
120
-
390
Collector-emitter saturation voltage
V_CE(sat)
-
-
-0.8
Transition frequency
f_T
-
100
-
Collector output capacitance
C_ob
-
50
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I_C= -50μA, I_E=0
I_C= -1mA, I_B=0
I_E= -50μA, I_C=0
V_CB= -20V, I_E=0
V_EB= -4V, I_C=0
V_CE= -3V, I_C= -0.5A
I_C= -2A, I_B= -200mA
V_CE= -5V, I_C= -500mA,
f_T=30MHz
V_CB= -10V, f=1MHz, I_E=0
http://www.SeCoSGmbH.com/
10-Feb-2015 Rev. C
Any changes of specification will not be informed individually.
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