C1815T Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
C1815T
0.15A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
 Power Dissipation
CLASSIFICATION OF h_{FE (1)}
Product-Rank C1815T-O C1815T-Y
Range
70~140
120~240
C1815T-GR
200~400
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
60
50
5
150
400
125, -55 ~ 125
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test condition
Collector to Base Breakdown Voltage
V_(BR)CBO
60
Collector to Emitter Breakdown Voltage V_(BR)CEO
50
Emitter to Base Breakdown Voltage
V_(BR)EBO
5
Collector Cut-Off Current
I_CBO
-
Collector Cut-Off Current
I_CEO
-
Emitter Cut-Off Current
I_EBO
-
DC Current Gain
h_FE
70
Collector to Emitter Saturation Voltage
V_CE(sat)
-
Base to Emitter Saturation Voltage
V_BE(sat)
-
Transition Frequency
f_T
80
Collector Output Capacitance
Cob
-
Noise Figure
NF
-
-
-
V I_C=100μA, I_E=0
-
-
V I_C=0.1mA, I_B=0
-
-
V I_E=100μA, I_C=0
-
0.1
μA V_CB=60V, I_E=0
0.1
μA V_CE=50V, I_B=0
-
0.1
μA V_EB=5V, I_C=0
700
V_CE=6V, I_C=2mA
-
0.25
V I_C=100mA, I_B=10mA
-
1
V I_C=100mA, I_B=10mA
-
-
MHz V_CE=10V, I_C=1mA, f=30MHz
-
3.5
pF V_CB=10V, I_E=0, f=1MHz
-
10
dB
V_CE=6V, I_C=0.1mA, f=1KHz,
R_G=10KΩ
http://www.SeCoSGmbH.com/
18-Mar-2010 Rev. B
Any changes of specification will not be informed individually.
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