C1815 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN

Elektronische Bauelemente
C1815
200 mW, 150 mA, 60 V
NPN Plastic Encapsulated Transistor
FEATURE
Power Dissipation
MARKING: HF
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
VCBO
60
VCEO
50
VEBO
5
IC
150
Pc
200
Junction, Storage Temperature
TJ, TSTG
150, -55 ~ 150
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
V(BR)CBO
60
-
-
V IC=100µA, IE = 0A
V(BR)CEO
50
-
-
V IC=0.1mA, IB = 0A
ICBO
-
-
0.1
µA VCB=60 V, IE = 0 A
ICEO
0.1
µA VCE=50 V, IB = 0 A
IEBO
-
-
0.1
µA VEB=5 V, IC = 0 A
hFE
130
-
400
VCE=6V, IC=2mA
VCE(sat)
-
-
0.25
V IC=100mA, IB=10mA
VBE(sat)
-
-
1
V IC=100mA, IB=10mA
fT
80
-
-
MHz VCE = 10V, IC = 1 mA, f = 30 MHz
CLASSIFICATION OF h_FE
Rank
Range
L
130-200
H
200-400
http://www.SeCoSGmbH.com/
31-Dec-2009 Rev. A
Any changes of specification will not be informed individually.
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