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| BFS20 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium frequency transistor | |||
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Elektronische Bauelemente
BFS20
NPN Silicon
Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
High Fequency Application.
VHF Band Amplifier application
RoHS Compliant Product
Power dissipation
PCM : 0.25 W
Collector Current
ICM : 25mA
Collector-base voltage
V(BR)CBO : 30 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150O C
3
1
2
Collector
3
1
Base
A
L
3
Top View
1
2
V
G
BS
2
Emitter
C
D
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Test conditions
Ic= 100µA, IE=0
Ic= 100µA, IB=0
IE=100µA, IC=0
VCB=20V, IE=0
VCE=15V, IB=0
VEB=4V, IC=0
VCE=10V, IC= 7mA
IC=10 mA, IB=1mA
IC=7mA, VCE=10V
VCE= 10V, IC=5mA
f = 100MHz
MIN
TYP
30
20
4
40
275
MAX UNIT
V
V
V
0.1
µA
0.1
µA
0.1
µA
120
0.3
V
0.9
V
MHz
Marking
G11
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 1
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