BD439 Datasheet, PDF (1/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

Elektronische Bauelemente
BD439/BD441
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-126
Features
8.0±0.2
3.2±0.2
2.0±0.2
* Amplifier and switching applications
11.0±0.2
4.14±0.1
O2.8±0.1
O3.2±0.1
1.4±0.1
12 3
MAXIMUM RATINGS* T_A=25 ^oC unless otherwise noted
Symbol
Paramete
Value
Units
V_CBO
Collector-Base Voltage
BD439
60
V
BD441
80
V_CEO
Collector-Emitter Voltage BD439
60
V
BD441
80
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current –Continuous
4
A
P_C
Collector Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
1.25
W
150
o_C
-55-150
o_C
15.3±0.2
1.27±0.1
0.76±0.1
4.55±0.1
2.28 Typ.
0.5± 0.1
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V_(BR)CBO ^{Ic=100μA,IE=0}
BD439 60
BD441 80
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V_(BR)CEO ^{Ic=100mA,IB=0}
V_(BR)EBO I_E=100μA,I_C=0
BD439 60
BD441 80
5
Collector cut-off current
V_CB=60V,I_E=0
I_CBO
V_CB=80V,I_E=0
BD439
BD441
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_EB=5V,I_E=0
V_CE=1V,I_C=500mA
V_CE=5V,I_C=10mA
V_CE=1V,I_C=2A
V_CE(sat)
V_BE
I_C=3A,I_B=0.3A
V_CE=1V,I_C=2A
40
BD439 20
BD441 15
BD439 25
BD441 15
Transition frequency
f_T
V_CE=1V,I_C=250mA
3
MAX UNIT
V
V
V
100 μA
1
mA
475
0.8
V
1.1
V
MHz
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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