BD438_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Plastic Encapsulate Transistors

Elektronische Bauelemente
BD438/BD440/BD442
PNP Type
Plastic Encapsulate Transistors
Features
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
* Amplifier and switching applications
MAXIMUM RATINGS* T_A=25^oC unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
BD438
-45
BD440
-60
V
BD442
-80
V_CEO
Collector-Emitter Voltage BD438
-45
BD440
-60
V
BD442
-80
V_EBO
I_C
P_C
T_J
T_stg
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
-5
V
-4
A
1.25
W
150
-55-150
TO-126
8.0±0.2
3.2±0.2
2.0±0.2
11.0±0.2
4.14±0.1
O2.8±0.1
O3.2±0.1
1.4±0.1
12 3
15.3±0.2
1.27±0.1
0.76±0.1
4.55±0.1
2.28 Typ.
0.5± 0.1
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
Test conditions
MIN
I_C=-100µA, I_E=0
V_(BR)CBO
BD438 ^-45
BD440 -60
BD442 _-80
I_C=-100mA, I_B=0
V_(BR)CEO
BD438 ^-45
BD440 -60
BD442 _-80
V_(BR)EBO
I_CBO
I_EBO
I_E=-100µA, I_C=0
V_CB=-45V, I_E=0
V_CB=-60V, I_E=0
V_CB=-80V, I_E=0
V_EB=-5V, I_C=0
h_FE(1)
V_CE=-5V, I_C=-10mA
-5
BD438
BD440
BD442
BD438 ³⁰
BD440 20
BD442 ₁₅
h_FE(2)
V_CE=-1V, I_C=-500mA
BD438 ⁸⁵
BD440/BD442 ₄₀
h_FE(3)
V_CE=-1V, I_C=-2A
BD438 ⁴⁰
BD440 25
BD442 ₁₅
V_CE(sat)
I_C=-3A, I_B=-300mA
BD438
BD440/BD442
V_BE
V_CE=-1V, I_C=-2A
BD438
BD440/BD442
f_T
V_CE=-1V, I_C=-250mA, f=1MHz
3
TYP MAX UNIT
V
V
V
-0.1 µA
-1
µA
375
475
-0.7
V
-0.8
-1.1
V
-1.5
MHz
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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